Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence-Reference-Cited by-同舟云学术

Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence

Published:2016-02-26 Issue:5S Volume:55 Page:05FJ01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nippert Felix,Karpov Sergey,Pietzonka Ines,Galler Bastian,Wilm Alexander,Kure Thomas,Nenstiel Christian,Callsen Gordon,Straßburg Martin,Lugauer Hans-Jürgen,Hoffmann Axel

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FJ01/pdf

Reference19 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Efficiency droop in nitride-based light-emitting diodes

3. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

4. Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

5. Experimental Determination of the Dominant Type of Auger Recombination in InGaN Quantum Wells

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