Effect of pH and chemical mechanical planarization process conditions on the copper–benzotriazole complex formation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=6S3/a=06JB01/pdf
Reference43 articles.
1. Chemical Mechanical Planarization: Slurry Chemistry, Materials, and Mechanisms
2. Corrosion inhibition by benzotriazole derivatives and sodium dodecyl sulphate as corrosion inhibitors for copper in ground water at different temperatures
3. Preparation of superhydrophobic films on copper substrate for corrosion protection
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2. Utilizing an α,β-Unsaturated Dicarboxylic Acid for a Defect Initiated Residue Removal During Cu post-Chemical Mechanical Planarization Cleaning;ECS Journal of Solid State Science and Technology;2022-12-01
3. Composite complex agent based on organic amine alkali for BTA removal in post CMP cleaning of copper interconnection;Journal of Electroanalytical Chemistry;2022-04
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5. Effect of EDTA-based alkaline cleaning solution on TAZ removal in post CMP cleaning of copper interconnection;Materials Research Bulletin;2021-05
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