Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method
Author:
Funder
International Joint Research Program for Innovative Energy Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab39be/pdf
Reference28 articles.
1. First-principles study of the structural, electronic, and optical properties ofGa2O3in its monoclinic and hexagonal phases
2. Oxygen vacancies and donor impurities in β-Ga2O3
3. The electronic structure of β-Ga2O3
4. First principles study on electronic structure of β-Ga2O3
5. Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals
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