Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application-Reference-Cited by-同舟云学术

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Growth and characterization of Si-doped Ga2O3 thin films by remote plasma atomic layer deposition: Toward UVC-LED application

Published:2022-04 Issue: Volume:435 Page:128252
ISSN:0257-8972
Container-title:Surface and Coatings Technology
language:en
Short-container-title:Surface and Coatings Technology

Author:

Zhang Xiao-Ying,Yang Yue,Fan Wei-Hang,Wang Chen,Wu Wan-Yu,Tseng Ming-Chun,Wuu Dong-Sing,Gao Peng,Kuo Hao-Chung,Lien Shui-Yang,Zhu Wen-Zhang

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference52 articles.

1. Fabrication and properties of a solar-blind ultraviolet photodetector based on Si-doped β-Ga2O3 film grown on p-Si (111) substrate by MOCVD;Hu;Optik,2021

2. High performance solar-blind UV detector based on β-Ga2O3/GaN nanowires heterojunction;Ding;J. Alloys Compd.,2021

3. The mechanism of hydrogen and oxygen evolution reaction in Ni-NiO/β-Ga2O3 photocatalyst;Zhou;Int. J. Hydrog. Energy,2016

4. Ga2O3-based solar-blind deep ultraviolet light-emitting diodes;Lin;J. Lumin.,2020

5. Realization of red electroluminescence from Ga2O3:Eu/Si based light-emitting diodes;Huang;Superlattice. Microst.,2021

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1. Preparation and Deep-UV Solar-Blind Photovoltaic Performance of AlYN-Based MSM Detector;IEEE Sensors Journal;2024-08-15

2. A review on synthesis and applications of gallium oxide materials;Advances in Colloid and Interface Science;2024-06

3. Superior performance of ZnGaO solar-blind photodetectors by Implementing TFT structure and tunable ZnO cycle ratio;Materials Today Chemistry;2024-06

4. Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies;Materials Today Advances;2024-06

5. Effect of oxidation temperature on physical properties of polycrystalline β-Ga2O3 grown by thermal oxidation of GaN in O2 ambient from 900 to 1400 °C;Journal of Materials Research and Technology;2024-05

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