Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method-Reference-Cited by-同舟云学术

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Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method

Published:2024-05 Issue: Volume:634 Page:127673
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ito T.^ORCID,Tomioka Y.,Rackerseder F.,Traub M.^ORCID,Hoffmann D.

Funder

Japan Ministry of Economy Trade and Industry

Publisher

Elsevier BV

Reference37 articles.

1. Floating zone growth of silicon;Muiznieks,2015

2. Floating zone growth of oxides and metallic alloys;Dabkowska,2014

3. β-Gallium oxide devices: progress and outlook;Higashiwaki;Phys. Status Solidi-Rapid Res. Lett.,2021

4. A review of Ga2O3 materials, processing, and devices;Pearton;Appl. Phys. Rev.,2018

5. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method;Aida;Jpn. J. Appl. Phys.,2008

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress of Floating-Zone Techniques for Bulk Single-Crystal Growth;Crystals;2024-06-14

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