Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes-Reference-Cited by-同舟云学术

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Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes

Published:2019-05-28 Issue:SC Volume:58 Page:SC1056
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Itokazu Yuri,Kuwaba Shunsuke,Jo Masafumi,Kamata Norihiko,Hirayama Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab1126/pdf

Reference32 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. III-Nitride Ultraviolet Emitters

3. AlGaN multiple quantum well based deep UV LEDs and their applications

4. Ultraviolet light-emitting diodes operating in the 340nm wavelength range and application to time-resolved fluorescence spectroscopy

5. Performance and application of high-power ultraviolet AlGaInN light-emitting diodes

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1. Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy;Materials;2024-01-09

2. 285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN;Journal of Scientific Reports-A;2023-03-29

3. Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition;Crystal Growth & Design;2023-03-14

4. Formation mechanism of (10−13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy;CrystEngComm;2023

5. Enhanced light extraction by optimizing surface microstructure for AlGaN-based deep ultraviolet light emitting diodes with 265 and 280 nm emission;Journal of Applied Physics;2022-12-14

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