The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution-Reference-Cited by-同舟云学术

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

Published:2019-05-23 Issue:SC Volume:58 Page:SCCC30
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yasue Shinji^ORCID,Sato Kosuke^ORCID,Kawase Yuta,Ikeda Junya,Sakuragi Yusuke,Iwayama Sho,Iwaya Motoaki,Kamiyama Satoshi,Takeuchi Tetsuya,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab112a/pdf

Reference50 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Review—Group III-Nitride-Based Ultraviolet Light-Emitting Diodes: Ways of Increasing External Quantum Efficiency

4. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

5. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

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