Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature-Reference-Cited by-同舟云学术

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Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature

Published:2012-01-01 Issue:1R Volume:51 Page:016202
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamamoto Hiroshi,Kuroda Hiroki,Ito Masafumi,Ohta Takayuki,Takeda Keigo,Ishikawa Kenji,Kondo Hiroki,Sekine Makoto,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference32 articles.

1. Low k, Porous Methyl Silsesquioxane and Spin-On-Glass

2. Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant

3. Effects of oxygen and fluorine on the dry etch characteristics of organic low-k dielectrics

4. Thermal Decomposition of Low Dielectric Constant Pulsed Plasma Fluorocarbon Films: I. Effect of Precursors and Substrate Temperature

5. Fluorinated–chlorinated SiO2 films prepared at low temperature by remote plasma-enhanced chemical-vapor deposition using mixtures of SiF4 and SiCl4

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fast species ranking for iterative species-oriented skeletal reduction of chemistry sets;Plasma Sources Science and Technology;2020-12-01

2. Interaction of oxygen with polystyrene and polyethylene polymer films: A mechanistic study;Journal of Applied Physics;2020-01-14

3. Continuous monitoring of temperature and rate of plasma etching of semiconductor wafers;Applied Physics Letters;2015-09-14

4. Wavelength dependence for silicon-wafer temperature measurement by autocorrelation-type frequency-domain low-coherence interferometry;Applied Optics;2015-08-07

5. Evaluation of Young’s modulus of imprinted hydrogen silsesquioxane pillar after residual layer removal by reactive ion etching;Microsystem Technologies;2013-11-30

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