Continuous monitoring of temperature and rate of plasma etching of semiconductor wafers
Author:
Affiliation:
1. Institute for Physics of Microstructures of the Russian Academy of Science, GSP-105, 603950 Nizhny Novgorod, Russia
2. Lobachevsky State University of Nizhny Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod, Russia
Funder
Russian science foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4930943
Reference24 articles.
1. Feature Profiles on Plasma Etch of Organic Films by a Temporal Control of Radical Densities and Real-Time Monitoring of Substrate Temperature
2. Epitaxy of Nanostructures
3. Handbook of Advanced Plasma Processing Techniques
4. Review of temperature measurements in the semiconductor industry
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