Hydrogen microwave plasma etching of silicon dioxide at high temperatures with in situ low-coherence interferometry control
Author:
Funder
Russian Science Foundation
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference42 articles.
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Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Control of silicon dioxide etching rate in hydrogen microwave plasma by addition of oxygen;Applied Surface Science;2023-03
2. In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4–CH4–H2 mixtures with optical emission spectroscopy monitoring;Physical Chemistry Chemical Physics;2023
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