In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4–CH4–H2 mixtures with optical emission spectroscopy monitoring-Reference-Cited by-同舟云学术

In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH₄–CH₄–H₂ mixtures with optical emission spectroscopy monitoring

Published:2023 Issue:39 Volume:25 Page:26623-26631
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Yurov Vladimir¹,Bolshakov Andrey¹,Ralchenko Victor¹²,Fedorova Irina¹,Martyanov Artem¹^ORCID,Pivovarov Pavel¹,Artemov Vladimir³^ORCID,Khomich Andrew¹⁴,Khmelnitskiy Roman⁵,Boldyrev Kirill⁶^ORCID

Affiliation:

1. Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilov str. 38, Moscow 119991, Russia

2. Harbin Institute of Technology, 92 Xidazhi Str., 150001 Harbin, P. R. China

3. Shubnikov Institute of Crystallography of Federal Scientific Research Centre “Crystallography and Photonics”, Russian Academy of Sciences, 119333 Moscow, Russia

4. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 141190 Fryazino, Russia

5. Lebedev Physics Institute, Russian Academy of Sciences, 117924 Moscow, Russia

6. Institute of Spectroscopy, Russian Academy of Sciences, 108840, Moscow, Troitsk, Russia

Abstract

Doping of homoepitaxial diamond films by microwave plasma CVD in GeH4–CH4–H2 mixtures with in situ control using optical emission spectroscopy is performed to produce germanium-vacancy (GeV) color centers emitting in yellow spectral range.

Funder

Russian Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP03967F

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