High Quality GaN Grown on Si(111) Using Fast Coalescence Growth-Reference-Cited by-同舟云学术

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High Quality GaN Grown on Si(111) Using Fast Coalescence Growth

Published:2011-12-01 Issue:12R Volume:50 Page:121001
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Luo Ruihong,Xiang Peng,Liu Minggang,Chen Tufu,He Zhiyuan,Fan Bingfeng,Zhao Yu,Xian Yulun,Wu Zhisheng,Jiang Hao,Wang Gang,Liu Yang,Zhang Baijun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. In situ and ex situ evaluation of the film coalescence for GaN growth on GaN nucleation layers

2. Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage

3. Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

4. Growth and characterization of InGaN blue LED structure on Si(111) by MOCVD

5. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate;Journal of Alloys and Compounds;2016-06

2. Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality;CrystEngComm;2014

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