Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality-Reference-Cited by-同舟云学术

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Growth evolution of SixNy on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Published:2014 Issue:25 Volume:16 Page:5724-5731
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Tzu Yu¹²³,Ou Sin Liang¹²³,Horng Ray Hua⁴²³⁵⁶,Wuu Dong Sing¹²³¹⁷

Affiliation:

1. Department of Materials Science and Engineering

2. National Chung Hsing University

3. Taichung 40227, Republic of China

4. Institute of Precision Engineering

5. Advanced Optoelectronic Technology Center

6. National Cheng Kung University

7. Da-Yeh University

Abstract

We verified that nanocrystalline Si_xN_y with a size ranging from 4 to 6 nm appeared on the pit sidewall and preferred to reside at the pit.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C3CE42638F

Reference38 articles.

1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes

2. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

3. Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

4. Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates

5. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

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1. The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application;Materials;2022-03-10

2. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask;Coatings;2020-12-25

3. Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism;CrystEngComm;2018

4. Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate;CrystEngComm;2018

5. 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering;Scientific Reports;2017-10-31

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