Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3055264
Reference32 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Calculation of ternary and quaternary III–V phase diagrams
3. Miscibility gaps in quaternary III/V alloys
4. Solid phase immiscibility in GaInN
5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
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