Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate-Reference-Cited by-同舟云学术

Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

Author:

Jiang Teng¹,Xu Shengrui¹,Zhang Jincheng¹,Li Peixian²³,Huang Jun⁴,Ren Zeyang¹,Zhu Jiaduo¹,Chen Zhibin¹,Zhao Ying¹,Hao Yue¹

Affiliation:

1. Wide Bandap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xi’dian University, Xi’an 710071, China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China

3. Xi’an Zoomview Optoelectronics Science & Technology CO., LTD, Xi’an 710071, China

4. Suzhou Institute of Nano-tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215132, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference31 articles.

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