Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes-Reference-Cited by-同舟云学术

Efficiency droop behavior improvement through barrier thickness modification for GaN-on-silicon light-emitting diodes

Published:2015-03-05 Issue:1 Volume:5 Page:057604
ISSN:1947-7988
Container-title:Journal of Photonics for Energy
language:en
Short-container-title:J. Photon. Energy

Author:

Tzou An-Jye¹,Lin Bing-Cheng²,Lee Chia-Yu²,Lin Da-Wei²,Liao Yu-Kuang¹,Li Zhen-Yu³,Chi Gou-Chung²,Kuo Hao-Chung²,Chang Chun-Yen⁴

Affiliation:

1. National Chiao Tung University, Department of Electrophysics, 1001 Ta Hsueh Road, Hsinchu 30010, TaiwanbNational Chiao Tung University, Department of Photonics and Institute of Electro-Optical Engineering, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

2. National Chiao Tung University, Department of Photonics and Institute of Electro-Optical Engineering, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

3. National Chiao Tung University, Department of Photonics and Institute of Electro-Optical Engineering, 1001 Ta Hsueh Road, Hsinchu 30010, TaiwancResearch Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11592, Tai

4. National Chiao Tung University, Department of Electrophysics, 1001 Ta Hsueh Road, Hsinchu 30010, TaiwancResearch Center for Applied Sciences, Academia Sinica, 128 Academia Road, Section 2, Nankang, Taipei 11592, Taiwan

Publisher

SPIE-Intl Soc Optical Eng

Subject

Renewable Energy, Sustainability and the Environment,Atomic and Molecular Physics, and Optics

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