Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate-Reference-Cited by-同舟云学术

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Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate

Published:2004-01 Issue:3-4 Volume:260 Page:331-335
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Wu M.,Zhang B.S.,Chen J.,Liu J.P.,Shen X.M.,Zhao D.G.,Zhang J.C.,Wang J.F.,Li N.,Jin R.Q.,Zhu J.J.,Yang H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. A. Krost, GaN-based epitaxy and devices on silicon, Fifth International Conference on Nitride Semiconductors, Nasa, Japan, 2003.

2. Reduction of stress at the initial stages of GaN growth on Si(111)

3. Selective growth of high quality GaN on Si(111) substrates

4. Growth and characterization of GaN and AlN films on (111) and (001) Si substrates

5. Y. Gao, D.A. Gulino, R. Higgins, MRS Internet J. Nitride Semicond. 4S1 (1999) G3.53.

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1. Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers;AIP Advances;2022-02-01

2. Ab initio study for molecular-scale adsorption, decomposition and desorption on AlN surfaces during MOCVD growth;Scientific Reports;2020-10-20

3. Controllable synthesis of Y doped AlN microtubes, prism-arrayed microstructures and microflowers via an improved DC arc discharge plasma method;Materials Science and Engineering: B;2018-12

4. Orientation of AlN Grains Nucleated on Different Diamond Substrates by Magnetron Sputtering;physica status solidi (a);2018-09-06

5. Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates;Applied Surface Science;2018-07

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