Growth and characterization of GaN and AlN films on (111) and (001) Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. InGaN-based blue light-emitting diodes and laser diodes
3. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
4. Low noisep-π-nGaN ultraviolet photodetectors
5. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
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1. Gallium nitride (GaN) on silicon substrates for LEDs;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018
2. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2017
3. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2016
4. Structural and optical characterization of low-temperature ALD crystalline AlN;Journal of Crystal Growth;2015-07
5. The effect of Al interlayers on the growth of AlN on Si substrates by metal organic chemical vapor deposition;Electronic Materials Letters;2014-11
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