Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates-Reference-Cited by-同舟云学术

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Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates

Published:2018-07 Issue: Volume:447 Page:512-517
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pan Lei,Dong Xun,Li Zhonghui,Luo Weike,Ni Jinyu

Funder

National Natural Science Foundation of China

National High Technology Research and Development Program of China

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference29 articles.

1. Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates

2. Au-Free AlGaN/GaN Power Diode on 8-in Si Substrate With Gated Edge Termination

3. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

4. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

5. Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

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1. Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study;Results in Physics;2024-09

2. Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics;Journal of Materials Science: Materials in Electronics;2024-05

3. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition;Crystals;2024-04-16

4. Microstructural changes in GaN and AlN under 950 MeV Au swift heavy ion irradiation;Applied Physics Letters;2024-03-11

5. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01

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