Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference16 articles.
1. Substrates for gallium nitride epitaxy
2. CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
3. Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
4. Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers
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2. Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer;Scientific Reports;2023-05-31
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4. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
5. Design of step-graded AlGaN buffers for GaN-on-Si heterostructures grown by MOCVD;Semiconductor Science and Technology;2023-02-22
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