Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers-Reference-Cited by-同舟云学术

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Crack formation in GaN on Si(111) substrates grown by MOCVD using HT Al-preseeding and HT AlN buffer layers

Published:2010-04-26 Issue:7-8 Volume:7 Page:2052-2055
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Kim Jong Ock,Hong Song Ki,Lim Kee Young

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition;Crystals;2024-04-16

2. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20

3. Stress study of GaN grown on serpentine-channels masked Si(111) substrate by MOCVD;Superlattices and Microstructures;2019-06

4. Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices;Japanese Journal of Applied Physics;2019-05-09

5. InGaN/GaN Blue Light Emitting Diodes Using Freestanding GaN Extracted from a Si Substrate;ACS Photonics;2018-02-05

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