Reduction of current collapse in AlGaN∕GaN HFETs using AlN interfacial layer-Reference-Cited by-同舟云学术

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Reduction of current collapse in AlGaN∕GaN HFETs using AlN interfacial layer

Published:2003 Issue:9 Volume:39 Page:750
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Lee J.S.,Kim J.W.,Lee J.H.,Kim C.S.,Oh J.E.,Shin M.W.,Lee J.H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030473?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

3. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

4. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs

5. Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD

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2. Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT;Materials Science in Semiconductor Processing;2021-11

3. Lateral GaN HEMT Structures;Integrated Circuits and Systems;2018

4. Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors;Chinese Physics B;2013-06

5. Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure;IEEE Electron Device Letters;2013-02

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