Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD-Reference-Cited by-同舟云学术

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Influence of Pinhole-Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD

Published:2001-11 Issue:1 Volume:188 Page:267-270
ISSN:0031-8965
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Kim Jong-Wook,Lee Jae-Seung,Shin Jin-Ho,Lee Jae-Hoon,Hahm Sung-Ho,Lee Jung-Hee,Kim Chang-Seok,Oh Jae-Eung,Shin Moo-Whan

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor

3. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB

4. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

5. Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of AlxGa1−xN-layers on planar and patterned substrates;Journal of Crystal Growth;2004-12

2. Nano-Ionics: More Than Just a Fashionable Slogan;Journal of Electroceramics;2004-07

3. Reduction of current collapse in AlGaN∕GaN HFETs using AlN interfacial layer;Electronics Letters;2003

4. Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates;Applied Physics Letters;2002-08-05

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