Growth of AlxGa1−xN-layers on planar and patterned substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Dislocations in GaN-Based Laser Diodes on Epitaxial Lateral Overgrown GaN Layers
3. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
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2. Dopant species with Al–Si and N–Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane;Journal of Physics D: Applied Physics;2015-06-29
3. Investigations of deep lying wide bandgap GaN and InGaN quantum well structures: A challenge for ellipsometric methods;physica status solidi (c);2008-05
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