Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference28 articles.
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1. Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics;Micro and Nanostructures;2022-11
2. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review;Materials Science in Semiconductor Processing;2022-11
3. Impact of Al x Ga1−x barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs;Chinese Physics B;2022-09-01
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