Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

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Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Published:2013-06 Issue:6 Volume:22 Page:067104
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Lü Yuan-Jie,Feng Zhi-Hong,Cai Shu-Jun,Dun Shao-Bo,Liu Bo,Yin Jia-Yun,Zhang Xiong-Wen,Fang Yu-Long,Lin Zhao-Jun,Meng Ling-Guo,Luan Chong-Biao

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1674-1056/22/i=6/a=067104/pdf

Reference15 articles.

1. Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

2. AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation

3. Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors

4. Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress

5. AlGaN/AlN/GaN high-power microwave HEMT

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors;Chinese Physics B;2014-07

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