Influence of a two-dimensional electron gas on current-voltage characteristics of Al 0.3 Ga 0.7 N/GaN high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor;Acta Physica Sinica;2020
2. Charged surface states scattering in AlGaN/GaN heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2017-06
3. Modified model of gate leakage currents in AlGaN/GaN HEMTs;Chinese Physics B;2016-09-23
4. Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor;Chinese Physics B;2015-08
5. High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model;Chinese Physics Letters;2015-03
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