Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor-Reference-Cited by-同舟云学术

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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

Published:2015-08 Issue:8 Volume:24 Page:087306
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Lv Yuan-Jie,Feng Zhi-Hong,Gu Guo-Dong,Yin Jia-Yun,Fang Yu-Long,Wang Yuan-Gang,Tan Xin,Zhou Xing-Ye,Lin Zhao-Jun,Ji Zi-Wu,Cai Shu-Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/24/8/087306/pdf

Reference13 articles.

1. Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

2. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

3. Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment*;Chinese Physics B;2021-02-01

2. X-band inverse class-F GaN internally-matched power amplifier;Chinese Physics B;2016-08-30

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