Hydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption-Reference-Cited by-同舟云学术

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Hydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption

Published:2017-08 Issue:17 Volume:53 Page:1200-1202
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Choi J.‐H.¹,Jo M.‐G.¹,Han S.‐W.¹,Kim H.¹,Kim S.‐H.²,Jang S.³,Kim J.‐S.⁴,Cha H.‐Y.¹

Affiliation:

1. School of Electronic and Electrical EngineeringHongik UniversitySeoulRepublic of Korea

2. Metamaterial Electronic Device Research CenterHongik UniversitySeoulRepublic of Korea

3. Department of Chemical EngineeringDankook UniversityYonginGyoenggi‐doRepublic of Korea

4. Department of Materials Science & EngineeringThe University of SeoulSeoulRepublic of Korea

Funder

National Research Foundation of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.2107

Reference8 articles.

1. Advances in biohydrogen production processes: An approach towards commercialization

2. Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

3. Hydrogen sensitive Schottky diode using semipolar (1 1 2¯ 2) AlGaN/GaN heterostructures

4. Highly sensitive nonpolar a‐plane GaN based hydrogen diode sensor with textured active area using photo‐chemical etching;Baik K.‐H.;Sens. Actuators B,2017

5. High sensing response Pd/GaN hydrogen sensors with a porous‐like mixture of Pd and SiO2;Chiu S.‐Y.;Semicond. Sci. Technol.,2009

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4. Sensitivity Investigation of Junctionless Gate-all-around Silicon Nanowire Field-Effect Transistor-Based Hydrogen Gas Sensor;Silicon;2022-12-21

5. A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications;Measurement;2021-12

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