Affiliation:
1. School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea
Abstract
We investigated the hydrogen gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) for high temperature sensing operation. The gate area of the sensor was functionalized using a 10 nm Pd catalyst layer for hydrogen gas sensing. A thin WO3 layer was deposited on top of the Pd layer to enhance the sensor selectivity toward hydrogen gas. At 200 °C, the sensor exhibited high sensitivity of 658% toward 4%-H2, while exhibiting only a little interaction with NO2, CH4, CO2, NH3, and H2S. From 150 °C to 250 °C, the 10 ppm hydrogen response of the sensor was at least eight times larger than other target gases. These results showed that this sensor is suitable for H2 detection in a complex gas environment at a high temperature.
Funder
National Research Foundation of Korea
National R&D Program through the NRF
Subject
Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry
Cited by
2 articles.
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