Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes-Reference-Cited by-同舟云学术

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Robust detection of hydrogen using differential AlGaN∕GaN high electron mobility transistor sensing diodes

Published:2006-12-11 Issue:24 Volume:89 Page:242111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Hung-Ta,Anderson T. J.,Ren F.,Li Changzhi,Low Zhen-Ning,Lin Jenshan,Gila B. P.,Pearton S. J.,Osinsky A.,Dabiran Amir

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2408635

Reference23 articles.

1. Proceedings of ECS;Hunter G. W.,2002

2. Reversible hydrogen annealing of metal‐oxide‐silicon carbide devices at high temperatures

3. SiC Based Field Effect Gas Sensors for Industrial Applications

4. High temperature Pt Schottky diode gas sensors on n-type GaN

5. Group-III-Nitride Based Gas Sensing Devices

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