A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses-Reference-Cited by-同舟云学术

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses

Published:2023 Issue:30 Volume:11 Page:10121-10148
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jiang Yang¹²³^ORCID,Li Wenmao²^ORCID,Du Fangzhou²^ORCID,Sokolovskij Robert²^ORCID,Zhang Yi¹²³^ORCID,Shi Shuhui¹²³^ORCID,Huang Weiguo⁴^ORCID,Wang Qing²^ORCID,Yu Hongyu²^ORCID,Wang Zhongrui¹³^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong

2. School of Microelectronics, Southern University of Science and Technology, Shenzhen, 518055, China

3. ACCESS – AI Chip Center for Emerging Smart Systems, InnoHK Centers, Hong Kong Science Park, Hong Kong

4. Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, China

Abstract

This paper provides a comprehensive review of recent progress in GaN-based gas sensors with a focus on their dynamic-related responses, mechanisms and applications, which are important for sensing performance, efficiency, and signal processing.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Chinese Academy of Sciences

Research Grants Council, University Grants Committee

Innovation and Technology Commission - Hong Kong

Shenzhen Science and Technology Innovation Program

Innovation and Technology Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry