High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2-Reference-Cited by-同舟云学术

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High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2

Published:2009-02-27 Issue:4 Volume:24 Page:045007
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chiu Shao-Yen,Huang Hsuan-Wei,Liang Kun-Chieh,Huang Tze-Hsuan,Liu Kang-Ping,Tsai Jung-Hui,Lour Wen-Shiung

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Toward innovations of gas sensor technology

2. Comparison and analysis of Pd‐ and Pt‐GaAs Schottky diodes for hydrogen detection

3. Pd-oxide- Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

4. Guest Editorial

5. Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes

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1. A review on H2 sensors based on FET;Chinese Journal of Analytical Chemistry;2024-06

2. A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses;Journal of Materials Chemistry C;2023

3. Ultra high-sensitive, prompt response and recovering Pt/(Pt+SiO 2) cermet layer/GaN-based hydrogen sensor for life-saving applications;Nanotechnology;2020-09-02

4. Hydrogen gas sensor of Pd‐functionalised AlGaN/GaN heterostructure with high sensitivity and low‐power consumption;Electronics Letters;2017-08

5. Free-standing gallium nitride membrane-based sensor for the impedimetric detection of alcohols;Journal of Applied Physics;2016-02-21

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