Pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in low-cost plastic packaging for DBS application
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960100?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Super low noise pseudomorphic InGaAs channel InP HEMTs
2. Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate
3. Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs
4. Shot noise in GaAs metal semiconductor field effect transistors with high gate leakage current
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22
2. Evaluation of scattering parameters, gain, and feedback-capacitance-dependent noise performance of a pseudomorphic high-electron-mobility transistor;Microwave and Optical Technology Letters;2005
3. Accurate charge-control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies;Microwave and Optical Technology Letters;2004
4. High Electron Mobility Transistors;RF and Microwave Semiconductor Device Handbook;2002-10-28
5. Field effect transistors: FETs and HEMTs;Thin Films;2001
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