Field effect transistors: FETs and HEMTs-Reference-Cited by-同舟云学术

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Field effect transistors: FETs and HEMTs

Published:2001 Issue: Volume: Page:71-145
ISSN:1079-4050
Container-title:Thin Films
language:
Short-container-title:

Author:

Chavarkar Prashant,Mishra Umesh

Publisher

Elsevier

Reference184 articles.

1. Electron mobility in modulation doped semiconductor superlattices;Dingle;Applied Physics Letters,1978

2. Optimal noise figure of microwave GaAs MESFET's;Fukui;IEEE Trans. Electron. Devices,1979

3. Enhancement mode high electron mobility transistors for logic application;Mimura;Japanese Journal of Applied Physics,1981

4. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET;Delagebeaudeuf;IEEE Trans. Electron Devices,1982

5. Subbands and charge control in two-dimensional electron gas field effect transistor;Vinter;Applied Physics Letters,1984

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications;Micromachines;2021-11-30

2. Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface;Applied Physics Express;2017-02-24

3. Semi-physical nonlinear circuit model with device/physical parameters for HEMTs;International Journal of Microwave and Wireless Technologies;2011-02

4. Controlling properties of field effect transistors by intermolecular cross-linking of molecular dipoles;Applied Physics Letters;2009-12-07

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