Subbands and charge control in a two‐dimensional electron gas field‐effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94734
Reference7 articles.
1. The present status of modulation-doped and insulated-gate field-effect transistors in III–V semiconductors
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3. Model for modulation doped field effect transistor
4. Characteristics of modulation‐doped AlxGa1−xAl/GaAs field‐effect transistors: Effect of donor‐electron separation
5. Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBE
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