Super low noise pseudomorphic InGaAs channel InP HEMTs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19930007?crawler=true&mimetype=application/pdf
Reference4 articles.
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analytical modeling of InSb/AlInSb heterostructure dual gate high electron mobility transistors;AEU - International Journal of Electronics and Communications;2018-09
2. Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver;SPIE Proceedings;2005-01-31
3. Accurate charge-control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies;Microwave and Optical Technology Letters;2004
4. Phased Antenna Array Based on Nonlinear Delay Line Technology;Novel Technologies for Microwave and Millimeter — Wave Applications;2004
5. Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz;ETRI Journal;1996-10-01
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