Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate-Reference-Cited by-同舟云学术

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Ultra low noise characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMT's with wide head T-shaped gate

Published:1995-06 Issue:6 Volume:16 Page:271-273
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jin-Hee Lee ,Hyung-Sup Yoon ,Chul-Soon Park ,Hyung-Moo Park

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/17196/00790732.pdf?arnumber=790732

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