Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs-Reference-Cited by-同舟云学术

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Photo/EB hybrid exposure process for T-shaped gate superlow-noise HEMTs

Published:1991 Issue:22 Volume:27 Page:2011
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Hosogi K.,Nakano N.,Minami H.,Katoh T.,Nishitani K.,Otsubo M.,Katsumata M.,Nagahama K.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19911245?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Tokue, T., Nashimoto, Y., Hirokawa, T., Mese, A., Ichikawa, S., Negishi, H., Toda, T., Kimura, T., Fujita, M., Nagasako, I., and Itoh, T.: ‘Ku-band super low-noise pseudomorphic heterojumction field-effect transistors (HJFET) with high producibility and high reliability’, IEEE MTT-S Dig., 1991), p. 705–708

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2. Fabrication of 50nm T-Gate on GaN Substrate;Advanced Materials Research;2012-02

3. Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency;Solid-State Electronics;2008-10

4. Modulation Doped FETs;Encyclopedia of RF and Microwave Engineering;2005-04-15

5. Low-Noise Metamorphic HEMTs With Reflowed 0.1-<tex>$muhbox m$</tex>T-Gate;IEEE Electron Device Letters;2004-06

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