Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency-Reference-Cited by-同舟云学术

Gate dielectric engineering of quarter sub micron AlGaN/GaN MISHFET: A new device architecture for improved transconductance and high cut-off frequency

Published:2008-10 Issue:10 Volume:52 Page:1610-1614
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Aggarwal Ruchika,Agrawal Anju,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. The special issue on group III-N semiconductor electronics;Mishra;IEEE Trans Electron Dev,2001

2. Fabrication and performance of GaN electronic devices;Pearton;Mater Sci Eng Rev,2000

3. Leakage mechanism in GaN and AlGaN Schottky interfaces;Hashizume;Appl Phys Lett,2004

4. Si3N4/AlGaN/GaN-metal–insulator–semiconductor heterostructure field-effect transistors;Hu;Appl Phys Lett,2001

5. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates;Chumbes;IEEE Trans Electron Dev,2001

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative analysis of electrically active defects in Au/AlGaN/GaN HEMTs structure using capacitance–frequency and DLTS measurements;Journal of Physics Communications;2021-12-01

2. An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs;Solid-State Electronics;2014-06

3. Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface;Journal of Materials Science: Materials in Electronics;2010-05-20

4. Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance;Surface and Interface Analysis;2010-05-11

5. RF performance assessment of AlGaN/GaN MISHFET at high temperatures for improved power and pinch-off characteristics;Microwave and Optical Technology Letters;2009-05-13