Low-threshold GaInP/AlGaInP ridge waveguide lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19971165?crawler=true&mimetype=application/pdf
Reference5 articles.
1. High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
2. Junction-side up operation of (Al)GaInP lasers with very low threshold currents
3. High performance 660 nm InGaP/AIGaInP quantum well metal cladding ridge waveguide laser diode
4. GaInP-(Al/sub y/Ga/sub 1-y/)InP 670 nm quantum-well lasers for high-temperature operation
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1. Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled Cl2/BCl3/CH4Plasma;Japanese Journal of Applied Physics;2004-12-09
2. Compound Heterostructure Semiconductor Lasers and Photodetectors;Low Temperature Electronics;2001
3. Low threshold current densities in red VCSELs;Journal of Crystal Growth;2000-12
4. Anodic oxidation of GaInP2;Corrosion Science;2000-10
5. The impact of LOC structures on 670-nm (Al)GaInP high-power lasers;IEEE Journal of Selected Topics in Quantum Electronics;2000-07
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