High performance 660 nm InGaP/AIGaInP quantum well metal cladding ridge waveguide laser diode
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19961003?crawler=true&mimetype=application/pdf
Reference3 articles.
1. Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes
2. Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells
3. High-power operation of a transverse-mode stabilised AlGaInp visible light (λL = 683 nm) semiconductor laser
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4. High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence;IEEE Journal of Quantum Electronics;2005-11
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