High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105723
Reference22 articles.
1. Short-wavelength (638 nm) room-temperature CW operation of InGaAlP laser diodes with quaternary active layer
2. 632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate
3. 20 Gbit/s AlGaAs/GaAs-HBT 2:1 selector and decision ICs
4. Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy
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