Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode-Reference-Cited by-同舟云学术

Optimization of active layer structures to minimize leakage current for an AlGaInP laser diode

Published:2005-11 Issue:7 Volume:81 Page:1369-1373
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Huang M.-F.,Tsai M.-L.,Shin J.-Y.,Sun Y.-L.,Yang R.-M.,Kuo Y.-K.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-005-3258-5.pdf

Reference23 articles.

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3. M.F. Huang, H.C. Lee, J.K. Ho, H.C. Lin, C.S. Cheng, C.C. Kuo, Y.K. Kuo: SPIE Proc. 3419, 110 (1998)

4. M.F. Huang, S.S. Ou, C.C. Liu: IEDMS’96, B6, December (1996)

5. G.J. Bauhuis, P.R. Hageman, P.K. Larsen: J. Crystal Growth 191, 313 (1998)

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