Junction-side up operation of (Al)GaInP lasers with very low threshold currents
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920972?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Visible-Wavelength Laser Diodes;Semiconductor Lasers II;1999
2. Reactive ion etching for AlGalnP/GaInP laser structures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-07
3. Low-threshold GaInP/AlGaInP ridge waveguide lasers;Electronics Letters;1997
4. Characterization of semiconductor laser diodes by beam injection techniques;Materials Science and Engineering: B;1996-12
5. 650 nm AlGaInP Visible Light Laser Diode with Dry-Etched Mesa Stripe;Japanese Journal of Applied Physics;1995-02-28
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