SiC backside source grounding process for AlGaN/GaN HEMT by physical dicing method
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2012.0130?crawler=true&mimetype=application/pdf
Reference4 articles.
1. High performance and high reliability AlGaN/GaN HEMTs
2. ALD Al2O3 passivated MBE-grown AlGaN∕GaN HEMTs on 6H-SiC
3. Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current
4. Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma
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