Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current-Reference-Cited by-同舟云学术

Reduction of on-resistance in ion-implanted GaN/AlGaN/GaN HEMTs with low gate leakage current

Published:2010-06 Issue:6 Volume:93 Page:19-24
ISSN:1942-9533
Container-title:Electronics and Communications in Japan
language:en
Short-container-title:Electron. Comm. Jpn.

Author:

Nomoto Kazuki,Satoh Masataka,Nakamura Tohru

Publisher

Wiley

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Networks and Communications,General Physics and Astronomy,Signal Processing

Reference7 articles.

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4. Mechanism of current collapse removal in field-plated nitride HFETs;Koudymov;IEEE Electron Device Lett,2005

5. Kikkawa T Nagahara M Okamoto N Tateno Y Yamaguchi Y Hara N Joshin K Asbeck PM Surface-charge controlled AlGaN/GaN-power HFET without current collapse and g m dispersion 24.4.1 25.4.4

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1. Enhanced gmand fTWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge;IEEE Electron Device Letters;2017-11

2. Characterization of silicon ion-implanted GaN and AlGaN;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02

3. SiC backside source grounding process for AlGaN/GaN HEMT by physical dicing method;Electronics Letters;2012