Characterization of silicon ion-implanted GaN and AlGaN
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
1. Si+ implanted AlGaN/GaN HEMTs with reduced on-resistance
2. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
3. Low-Frequency Noise Characteristics in Ion-Implanted GaN-Based HEMTs
4. Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current
5. K. Nomoto, M. Satoh, T. Nakamura, Electronics and Communications in Japan, ©2010 Wiley Periodicals, Inc., vol. 93, no. 6, 2010.
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