An Improved Performance of High Power Application of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study-Reference-Cited by-同舟云学术

An Improved Performance of High Power Application of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study

Published:2021-11-25 Issue: Volume: Page:786-799
ISSN:2367-3370
Container-title:Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities
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Author:

Mohammed Khaouani,Abdelkader Hamdoune,Bouazza Guen Ahlam,Zakarya Kourdi,Bencherif Hichem

Publisher

Springer International Publishing

Link

https://link.springer.com/content/pdf/10.1007/978-3-030-92038-8_80

Reference35 articles.

1. Padmaja, T., N’Gongo, R.S., Ratna, P., Vasu, P.S., Babu, J.S., Kirty, V.S.R.: A 18–40 GHz Monolithic GaAs pHEMT low noise amplifier. In: Proceedings of the IEEE Conference on Recent Advances in Microwave Theory and Applications, Jaipur, India, pp. 309–311, November 2008. https://doi.org/10.1109/AMTA.2008.4763047

2. Wu, D.-W., et al.: A 2W, 65% PAE single-supply enhancement-mode power PHEMT for 3V PCS applications. In: 1997 IEEE MTT-S Digest, pp. 1319–1322, June 1997. https://doi.org/10.1109/MWSYM.1997.596570

3. Kumar, S., Vice, M., Morkner, H., Lam, W.: Enhancement mode GaAs PHEMT LNA with Linearity Control (IP3) and phased matched mitigated bypass switch and differential active mixer. In: 2003 IEEE MTT-S Digest, pp. 1577–1580, June 2003. https://doi.org/10.1109/MWSYM.2003.1210438

4. Boon-Eu, S., Lan, N., Vice, M., Chan, E., Yut-Hoong, C.: A high isolation enhancement mode GaAs PHEMT buffer amplifier. In: 2003 NCTT Proceedings, pp. 58–62, January 2003. https://doi.org/10.1109/NCTT.2003.1188302

5. Moriuchi, T., et al.: A single supply miniature PA MMIC for multi-mode digital handsets using quasi-enhancement mode PHEMT. In: 2000 GaAs IC Symposium, pp. 29–32, November 2000. https://doi.org/10.1109/GAAS.2000.906266

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