A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications-Reference-Cited by-同舟云学术

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A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications

Published: Issue: Volume: Page:
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Container-title:1997 IEEE MTT-S International Microwave Symposium Digest
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Author:

Der-Woei Wu ,Parkhurst R.,Shyh-Liang Fu ,Wei J.,Chung-Yi Su ,Shih-Shun Chang ,Moy D.,Fields W.,Chye P.,Levitsky R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4660/13055/00596570.pdf?arnumber=596570

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Improved Performance of High Power Application of Al0.25Ga0.75N/AlN/GaN/Al0.25Ga0.75N Pseudo-morphic High Electron Mobility Transistor (PHEMT): Numerical Simulation Study;Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities;2021-11-25

2. Effect of Gate Sinking on the Device Performance of the InGaP/AlGaAs/InGaAs Enhancement-Mode PHEMT;IEEE Electron Device Letters;2007-02

3. 2 V-operated InGaP-AlGaAs-InGaAs enhancement-mode pseudomorphic HEMT;IEEE Electron Device Letters;2005-02

4. Single-voltage-supply operation of Ga0.51In0.49P/AlGaAS/IN0.15Ga0.85As PHEMTS with high-power density;Microwave and Optical Technology Letters;2003-08-28

5. The epHEMT gate at microwave frequencies;IEEE Transactions on Microwave Theory and Techniques;2003-06

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